PV218N50 Datasheet - Fairchild Semiconductor

PV218N50, 500V N-Channel MOSFET

FQP18N50V2/FQPF18N50V2 500V N-Channel MOSFET QFET® FQP18N50V2/FQPF18N50V2 500V N-Channel MOSFET .
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

Features

* 550V @TJ = 150°C
* Typ. RDS(on) = 0.265Ω @VGS = 10 V
* Low gate charge (typical 42 nC)
* Low Crss (typical 11 pF)
* Fast switching
* 100% avalanche tested

PV218N50-FairchildSemiconductor.pdf