RMM2080 Datasheet (Fairchild Semiconductor) - 2-18 GHz Wideband Variable-Gain Driver Amplifier

RMM2080, 2-18 GHz Wideband Variable-Gain Driver Amplifier

The Fairchild Semiconductor’s RMM2080 GaAs MMIC device is a three-stage distributed medium-power amplifier with gain control capability.

The circuit incorporates ionimplanted, 0.5-µm gate MESFET devices fabricated on a semi-insulating GaAs substrate.

The first two stages are 4cell distributed amplif

RMM2080 Features

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* 18GHz Bandwidth 24dB Typical Gain ±2dB Gain Flatness 20dBm Output Power Typical Three Stages of Distributed Amplification Gain Control of up to 70dB range Dual-Gate Ion-Implanted 0.5µm FETs Chip Size: 4.14mm x