SFP9530
FEATURES n Avalanche Rugged Technology n Rugged Gate Oxide Technology n Lower Input Capacitance n Improved Gate Charge n Extended Safe Operating Area n 175 C Operating Temperature n Lower Leakage Current : 10 µA (Max.) @ VDS = -60V n Low RDS(ON) : 0.362 Ω (Typ.)
SFW/I9Z14
BVDSS = -60 V RDS(on) = 0.5 Ω ID = -6.7 A
D2-PAK
2 o
I2-PAK
1 3 2 3
1. Gate 2. Drain 3. Source
Absolute Maximum Ratings
Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD Characteristic Drain-to-Source Voltage Continuous Drain Current (TC=25 C) Continuous Drain Current (TC=100 C) Drain Current-Pulsed Gate-to-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt o Total Power Dissipation (TA=25 C)
- o o
Value -60 -6.7 -4.7
1 O 2 O 1 O 1 O 3 O o
Units V A A V m J A m J V/ns W W W/ C o
-27 ±30 115 -6.7 3.8 -5.5 3.8 38 0.25
- 55 to +175
Total Power Dissipation (TC=25 C) Linear Derating Factor Operating Junction and Storage Temperature Range Maximum Lead...
