SSN1N45B - 450V N-Channel MOSFET

Fairchild Semiconductor

SSN1N45B Datasheet Preview — Preview of SSN1N45B PDF

Datasheet Details

Part number	SSN1N45B
Manufacturer	Fairchild ↗ Semiconductor
File Size	703.81 KB
Description	450V N-Channel MOSFET
Datasheet	SSN1N45B_FairchildSemiconductor.pdf

SSN1N45B Product details

Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, www.DataSheet4U.com planar, DMOS technology.

Features

0.5A, 450V, RDS(on) = 4.25Ω @VGS = 10 V Low gate charge ( typical 6.5 nC) Low Crss ( typical 6.5 pF) 100% avalanche tested Improved dv/dt capability Gate-Source Voltage ± 50V guaranteed D !.
◀ ▲.
G! TO-92 GDS SSN Series ! S Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TC = 25°C unless otherwise noted Parameter Drain-Source Voltage - Continuous (TC = 25°C) Drain Current - Continuous (TC.

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Published: Nov 3, 2008 |