SSN1N45B Datasheet - Fairchild Semiconductor

SSN1N45B 450V N-Channel MOSFET

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, www.DataSheet4U.com planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high e.

SSN1N45B Features

* 0.5A, 450V, RDS(on) = 4.25Ω @VGS = 10 V Low gate charge ( typical 6.5 nC) Low Crss ( typical 6.5 pF) 100% avalanche tested Improved dv/dt capability Gate-Source Voltage ± 50V guaranteed D !

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* G! TO-92 GDS SSN Series

SSN1N45B Datasheet (703.81 KB)