SSN1N45B Datasheet, Mosfet, Fairchild Semiconductor

SSN1N45B Features

• Mosfet
• 0.5A, 450V, RDS(on) = 4.25Ω @VGS = 10 V Low gate charge ( typical 6.5 nC) Low Crss ( typical 6.5 pF) 100% avalanche tested Im

PDF File Details

Part number:

SSN1N45B

Manufacturer:

Fairchild Semiconductor

File Size:

703.81kb

Download:

📄 Datasheet

Description:

450v n-channel mosfet. These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, www.DataSheet4U.com plana

TAGS

SSN1N45B

Fairchild Semiconductor

📁 Related Datasheet

SSN-121CHT - H=0.8mm Slide Switches (MITSUMI)
MITSUMI H=0.8mm Slide Switches SSN Series FEATURES 1. 0.8mm in height. 2. Suitable for SMT reflow soldering. 3. Tape packaging supporting the auto mou.

SSN-121RHT - H=0.8mm Slide Switches (MITSUMI)
MITSUMI H=0.8mm Slide Switches SSN Series FEATURES 1. 0.8mm in height. 2. Suitable for SMT reflow soldering. 3. Tape packaging supporting the auto mou.

SSN20P52E-C - P-Channel Enhancement MOSFET (SeCoS)
Elektronische Bauelemente SS 20P52E-C -0.66A, -20V, RDS(O ) 520 mΩ P-Channel Enhancement MOSFET RoHS Compliant Product A suffix of “-C” specifies ha.

SSN3043 - N-Channel MOSFET (SeCoS Halbleitertechnologie)
SSN3043 Elektronische Bauelemente 255mA , 20V , RDS(ON) 3.4Ω N-Channel Enhancement Mode Power MOSFET RoHS Compliant Product A Suffix of “-C” specifie.

SSN3043-C - N-Channel MOSFET (SeCoS)
Elektronische Bauelemente SSN3043-C 255mA , 20V , RDS(ON) 3.4Ω N-Channel Enhancement Mode Power MOSFET RoHS Compliant Product A Suffix of “-C” speci.

SSN3134KPL-C - N-Channel Enhancement MOSFET (SeCoS)
Elektronische Bauelemente SSN3134KPL-C 0.75A, 20V, RDS(ON) 380mΩ N-Channel Enhancement MOSFET RoHS Compliant Product A suffix of “-C” specifies halo.

SSN3139K-C - P-Channel Enhancement MOSFET (SeCoS)
Elektronische Bauelemente SSN3139K-C -0.35 A, -20 V, RDS(ON) 0.9 Ω P-Channel Enhancement MOSFET RoHS Compliant Product A suffix of “-C” specifies ha.

SSN318NE-C - N-Channel MOSFET (SeCoS)
Elektronische Bauelemente SSN318NE-C 0.25A , 60V, RDS(ON) 1.6 N-Channel Enhancement MOSFET FEATURES  60V/250mA RDS(ON)≦ 1.6Ω@VGS=10V RDS(ON)≦ 2Ω@.

SSN320 - NTC Inrush Current Limiters (Vishay)
NTC Inrush Current Limiters FEATURES • Temperature measurement. • Temperature control. • Inrush current limiting. • Temperature pensation. • Sensin.

SSN330 - NTC Inrush Current Limiters (Vishay)
NTC Inrush Current Limiters FEATURES • Temperature measurement. • Temperature control. • Inrush current limiting. • Temperature pensation. • Sensin.