SSN1N45B Datasheet (Fairchild Semiconductor)

SSN1N45B, 450V N-Channel MOSFET

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, www.DataSheet4U.com planar, DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high e

SSN1N45B Features

* 0.5A, 450V, RDS(on) = 4.25Ω @VGS = 10 V Low gate charge ( typical 6.5 nC) Low Crss ( typical 6.5 pF) 100% avalanche tested Improved dv/dt capability Gate-Source Voltage ± 50V guaranteed D !

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* G! TO-92 GDS SSN Series