SSW10N60B Datasheet - Fairchild Semiconductor

SSW10N60B 600V N-Channel MOSFET

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the a.

SSW10N60B Features

* 9.0A, 600V, RDS(on) = 0.8Ω @VGS = 10 V Low gate charge ( typical 54 nC) Low Crss ( typical 32 pF) Fast switching 100% avalanche tested Improved dv/dt capability D D !

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* G S D2-PAK SSW Series G D S I2-PAK SSI Ser

SSW10N60B_FairchildSemiconductor.pdf