SSW10N60B Datasheet - Fairchild Semiconductor

SSW10N60B, 600V N-Channel MOSFET

SSW10N60B / SSI10N60B November 2001 SSW10N60B / SSI10N60B 600V N-Channel MOSFET General .
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology.

SSW10N60B_FairchildSemiconductor.pdf

SSW10N60B Datasheet Preview — Preview of SSW10N60B PDF

Datasheet Details

Part number:

SSW10N60B

Manufacturer:

Fairchild Semiconductor

File Size:

686.47 KB

Description:

600V N-Channel MOSFET

Features

* 9.0A, 600V, RDS(on) = 0.8Ω @VGS = 10 V Low gate charge ( typical 54 nC) Low Crss ( typical 32 pF) Fast switching 100% avalanche tested Improved dv/dt capability D D !
* ◀ ▲
* G S D2-PAK SSW Series G D S I2-PAK SSI Ser

SSW10N60B Distributors

📁 Related Datasheet

SSW108 SSW-104-01-T-S SSW-108 SSW-124 SSW-1xx-xx-F-x SSW-1xx-xx-G-x

📌 All Tags

SSW10N60B 600V N-Channel MOSFET Fairchild Semiconductor

Fairchild Semiconductor SSW10N60B-like datasheet