TIP141T Datasheet - Fairchild Semiconductor

TIP141T NPN Epitaxial Silicon Darlington Transistor

TIP141T Features

* Monolithic Construction With Built In Base-Emitter Shunt Resistors

* High DC Current Gain : hFE = 1000 @ VCE = 4V, IC = 5A (Min.)

* Industrial Use

* Complement to TIP145T/146T/147T Equivalent Circuit C July 2009 B 1 TO-220 1.Base 2.Collector 3.Emitter R1 R1 ≅ 8k

Datasheet Details

TIP141T

Fairchild Semiconductor

302.33 KB

Npn epitaxial silicon darlington transistor.

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