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IRFS830B 500V N-Channel MOSFET

IRFS830B Description

IRF830B/IRFS830B November 2001 IRF830B/IRFS830B 500V N-Channel MOSFET General .
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology.

IRFS830B Features

* 4.5A, 500V, RDS(on) = 1.5Ω @VGS = 10 V Low gate charge ( typical 27 nC) Low Crss ( typical 17 pF) Fast switching 100% avalanche tested Improved dv/dt capability D G G DS TO-220 IRF Series GD S TO-220F IRFS Series S Absolute Maximum R

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Datasheet Details

Part number
IRFS830B
Manufacturer
Fairchild
File Size
888.88 KB
Datasheet
IRFS830B_Fairchild.pdf
Description
500V N-Channel MOSFET

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500V N-Channel MOSFET Fairchild
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