MMBF170
Description
These N-Channel enhancement mode field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. These products have been designed to minimize on-state resistance while provide rugged, reliable, and fast switching performance. They can be used in most applications requiring up to 500m A DC. These products are particularly suited for low voltage, low current applications such as small servo motor control, power MOSFET gate drivers, and other switching applications.
Features
- High density cell design for low RDS(ON).
- Voltage controlled small signal switch.
- Rugged and reliable.
- High saturation current capability.
BS170
D GS
TO-92
S SOT-23 G
Absolute Maximum Ratings TA = 25°C unless otherwise noted
Symbol
Parameter
BS170
VDSS VDGR VGSS
Drain-Source Voltage Drain-Gate Voltage (RGS ≤ 1MΩ) Gate-Source Voltage Drain Current
- Continuous
- Pulsed
500 1200
60 60 ± 20
500 800
TJ, TSTG TL
Operating...
