MMBTA13 Datasheet (Fairchild) - NPN Darlington Transistor

MMBTA13, NPN Darlington Transistor

MMBTA13 NPN Darlington Transistor January 2005 MMBTA13 NPN Darlington Transistor This device is designed for applications requiring extremely high Current gain at collector Currents to 1.0A.

Sourced from process 05.

See MPSA14 for characteristics.

3 2 SOT-23 1 Mark: 1M 1.

Base 2.

Emitter 3.

Collector Absolute Maximum Ratings Ta = 25°C unless otherwise noted Symbol Parameter VCES VCBO VEBO IC TJ, TSTG Collector-Emitter Voltage Collector-Base Voltage Emitter-B