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11P06 - FQB11P06

11P06 Description

www.DataSheet4U.com FQB11P06 / FQI11P06 May 2001 QFET FQB11P06 / FQI11P06 60V P-Channel MOSFET General .
These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

11P06 Features

* -11.4A, -60V, RDS(on) = 0.175Ω @VGS = -10 V Low gate charge ( typical 13 nC) Low Crss ( typical 45 pF) Fast switching 100% avalanche tested Improved dv/dt capability 175°C maximum junction temperature rating D G! G S !

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