7N60B - 600V N-Channel MOSFET

Fairchild Semiconductor

Datasheet Details

Part number	7N60B
Manufacturer	Fairchild ↗ Semiconductor
File Size	912.54 KB
Description	600V N-Channel MOSFET
Datasheet	7N60B-FairchildSemiconductor.pdf

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology.

7.0A, 600V, RDS(on) = 1.2Ω @VGS = 10 V.
Low gate charge ( typical 38 nC).
Low Crss ( typical 23 pF).
Fast switching.
100% avalanche tested.
Improved dv/dt capability.
TO-220F package isolation = 4.0kV (Note 6) D G DS TO-220 SSP Series GD S TO-220F SSS Series G S Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol Parameter VDSS Drain-Source Voltage ID Drain Current - Continuous (TC = 25°C) - Continuous (TC.

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Published: Jul 25, 2024 |