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G7N60A4D - HGTG7N60A4D

Fairchild Semiconductor

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Datasheet Details

Part number	G7N60A4D
Manufacturer	Fairchild ↗ Semiconductor
File Size	152.16 KB
Description	HGTG7N60A4D
Datasheet	G7N60A4D-FairchildSemiconductor.pdf

G7N60A4D Product details

Features

of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC. The IGBT used is the development type TA49331. The diode used in anti-parallel is the development type TA49370. This IGBT is ideal for many high voltage switching.

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Published: Mar 16, 2015 |