SFW2955 - Advanced Power MOSFET

Fairchild Semiconductor

Datasheet Details

Part number	SFW2955
Manufacturer	Fairchild ↗ Semiconductor
File Size	275.85 KB
Description	Advanced Power MOSFET
Datasheet	SFW2955_FairchildSemiconductor.pdf

Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area 175 C Operating Temperature Lower Leakage Current : 10 µA (Max. ) @ VDS = -60V Low RDS(ON) : 0.22 Ω (Typ. ) 1 SFW/I2955 BVDSS = -60 V RDS(on) = 0.3Ω ID = -9.4 A D2-PAK 2 o I2-PAK 1 3 2 3 1. Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD Characteristic Drain-to-Source Voltage Continuous Drain Current (TC=25 C) Continuo.

📁 SFW2955 Similar Datasheet

Other Datasheets by Fairchild Semiconductor

Published: Apr 5, 2007 |