CEP5710
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Isdn s-bus common mode inductor.
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CEP5753 - CEPT/T1 Common Mode Inductor
(Filtran)
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CEPT/T1
SCOPE CES5753 is a 4-winding mon mode inductor. It is specifically designed to suppress EMI on the Primary Rate line (.
CEP5756 - ISDN S-Bus Common Mode Inductor
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ISDN S-Bus
Common Mode Inductor
CEP5756
CEP5756 is a 4-winding mon mode inductor. It is specifically designed to suppress E.
CEP50N06 - N-Channel MOSFET
(CET)
N-Channel Enhancement Mode Field Effect Transistor FEATURES
60V, 50A ,RDS(ON) = 17mΩ (typ) @VGS = 10V. Super high dense cell design for extremely low .
CEP50N10 - N-Channel MOSFET
(CET)
CEP50N10/CEB50N10
N-Channel Enhancement Mode Field Effect Transistor
FEATURES
100V, 50A, RDS(ON) = 30mΩ @VGS = 10V. Super high dense cell design for .
CEP50P03 - P-Channel MOSFET
(CET)
CEP50P03/CEB50P03
P-Channel Enhancement Mode Field Effect Transistor FEATURES
-30V, -47A, RDS(ON) =20mΩ @VGS = -10V. RDS(ON) =32mΩ @VGS = -4.5V. Super.
CEP5175 - P-Channel MOSFET
(CET)
CEP5175/CEB5175
P-Channel Enhancement Mode Field Effect Transistor
PRELIMINARY
FEATURES
-55V, -50A, RDS(ON) = 23mΩ @VGS = 10V. RDS(ON) = 28mΩ @VGS.
CEP51A3 - N-Channel MOSFET
(CET)
CEP51A3/CEB51A3
N-Channel Enhancement Mode Field Effect Transistor FEATURES
30V, 48A, RDS(ON) =16.5mΩ @VGS = 10V. RDS(ON) =28mΩ @VGS = 4.5V. Super hig.
CEP540A - N-Channel MOSFET
(CET)
CEP540A/CEB540A
N-Channel Enhancement Mode Field Effect Transistor FEATURES
100V, 36A, RDS(ON) = 48mΩ @VGS = 10V. Super high dense cell design for ext.
CEP540L - N-Channel MOSFET
(CET)
CEP540L/CEB540L CEF540L
N-Channel Enhancement Mode Field Effect Transistor
FEATURES
100V, 36A, RDS(ON) = 50mΩ @VGS = 10V. RDS(ON) = 53mΩ @VGS = 5V.
S.
CEP540N - N-Channel MOSFET
(CET)
CEP540N/CEB540N CEF540N
N-Channel Enhancement Mode Field Effect Transistor
FEATURES
100V, 36A, RDS(ON) = 53mΩ @VGS = 10V. Super high dense cell desig.
