FP4050 2-WATT POWER PHEMT

Filtronic Compound Semiconductors

Description

PRELIMINARY DATA SHEET FP4050 2-WATT POWER PHEMT * .
AND APPLICATIONS GATE BOND PAD The FP4050 is an Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs) Pseudomorphic High Electron Mobi.

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Datasheet Specifications

Part number: FP4050
Manufacturer: Filtronic Compound Semiconductors
File Size: 39.57 KB
Datasheet: FP4050_FiltronicCompoundSemiconductors.pdf
Description: 2-WATT POWER PHEMT

Features

* 48 dBm IP3 at 2 GHz
* 34 dBm P-1dB at 2 GHz
* 14 dB Power Gain at 2 GHz DRAIN BOND PAD SOURCE BOND PAD (2X)

Applications

* GATE BOND PAD The FP4050 is an Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs) Pseudomorphic High Electron Mobility Transistor (PHEMT), utilizing an Electron-Beam directwrite 0.50 um by 400 um Schottky barrier gate. The recessed “mushroom” gate structure minimizes parasitic gat

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FP4050 2-WATT POWER PHEMT Filtronic Compound Semiconductors

Filtronic Compound Semiconductors FP4050-like datasheet