Datasheet Details
| Part number | FP4050 |
|---|---|
| Manufacturer | Filtronic Compound Semiconductors |
| File Size | 39.57 KB |
| Description | 2-WATT POWER PHEMT |
| Datasheet |
|
| Part number | FP4050 |
|---|---|
| Manufacturer | Filtronic Compound Semiconductors |
| File Size | 39.57 KB |
| Description | 2-WATT POWER PHEMT |
| Datasheet |
|
AND APPLICATIONS GATE BOND PAD The FP4050 is an Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs) Pseudomorphic High Electron Mobility Transistor (PHEMT), utilizing an Electron-Beam directwrite 0.50 um by 400 um Schottky barrier gate.The recessed “mushroom” gate structure minimizes parasitic gate-source and gate resistances.The FP4050
📁 FP4050 Similar Datasheet