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FP4050

2-WATT POWER PHEMT

FP4050 Features

* 48 dBm IP3 at 2 GHz

* 34 dBm P-1dB at 2 GHz

* 14 dB Power Gain at 2 GHz DRAIN BOND PAD SOURCE BOND PAD (2X)

* DESCRIPTION AND APPLICATIONS GATE BOND PAD The FP4050 is an Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs) Pseudomorphic High Elec

FP4050 General Description

AND APPLICATIONS GATE BOND PAD The FP4050 is an Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs) Pseudomorphic High Electron Mobility Transistor (PHEMT), utilizing an Electron-Beam directwrite 0.50 um by 400 um Schottky barrier gate. The recessed “mushroom” gate structure minimi.

FP4050 Datasheet (39.57 KB)

Preview of FP4050 PDF

Datasheet Details

Part number:

FP4050

Manufacturer:

Filtronic Compound Semiconductors

File Size:

39.57 KB

Description:

2-watt power phemt.

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TAGS

FP4050 2-WATT POWER PHEMT Filtronic Compound Semiconductors

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