LPA6836V - MEDIUM POWER PHEMT WITH SOURCE VIAS

Filtronic Compound Semiconductors

LPA6836V Datasheet Preview — Preview of LPA6836V PDF

Datasheet Details

Part number	LPA6836V
Manufacturer	Filtronic Compound Semiconductors
File Size	70.02 KB
Description	MEDIUM POWER PHEMT WITH SOURCE VIAS
Datasheet	LPA6836V_FiltronicCompoundSemiconductors.pdf

LPA6836V Product details

Description

AND APPLICATIONS DIE SIZE: 15.4X14.2 mils (390x360 µm) DIE THICKNESS: 3.9 mils (100 µm) BONDING PADS: 3.0X3.0 mils (75x75 µm) The FPA6836V is an Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs) Pseudomorphic High Electron Mobility Transistor (PHEMT), utilizing an Electron-Beam directwrite 0.25 µm by 360 µm Schottky barrier gate.The recessed “mushroom” gate structure minimizes parasitic gate-source and gate resistances.The epitaxial structure and processing have been optimi

Features

S.
25 dBm Output Power at 1-dB Compression at 18 GHz.
9.5 dB Power Gain at 18 GHz.
55% Power-Added Efficiency.
Source Vias to Backside Metallization DRAIN BOND PAD LPA6836V MEDIUM POWER PHEMT WITH SOURCE VIAS GATE BOND PAD.

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Published: Mar 22, 2005 |