LPA6836V

MEDIUM POWER PHEMT WITH SOURCE VIAS

Filtronic Compound Semiconductors

LPA6836V Features

* 25 dBm Output Power at 1-dB Compression at 18 GHz

* 9.5 dB Power Gain at 18 GHz

* 55% Power-Added Efficiency

* Source Vias to Backside Metallization DRAIN BOND PAD LPA6836V MEDIUM POWER PHEMT WITH SOURCE VIAS GATE BOND PAD

* DESCRIPTION AND APPLICATIONS

LPA6836V General Description

AND APPLICATIONS DIE SIZE: 15.4X14.2 mils (390x360 µm) DIE THICKNESS: 3.9 mils (100 µm) BONDING PADS: 3.0X3.0 mils (75x75 µm) The FPA6836V is an Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs) Pseudomorphic High Electron Mobility Transistor (PHEMT), utilizing an Electron-Beam d.

LPA6836V Datasheet (70.02 KB)

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Datasheet Details

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LPA6836V

Manufacturer:

Filtronic Compound Semiconductors

File Size:

70.02 KB

Description:

Medium power phemt with source vias.

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LPA6836V MEDIUM POWER PHEMT WITH SOURCE VIAS Filtronic Compound Semiconductors

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LPA6836V Features

LPA6836V General Description

Datasheet Details

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