MDE6IC7120GNR1 Datasheet (Freescale Semiconductor) - RF LDMOS Wideband Integrated Power Amplifiers

MDE6IC7120GNR1, RF LDMOS Wideband Integrated Power Amplifiers

0.01 μF, 50 V Chip Capacitors 1.0 μF, 35 V Chip Capacitors 68 pF Chip Capacitors 10 μF, 35 V Chip Capacitors 220 μF, 50 V Electrolytic Capacitors 18 pF Chip Capacitors 1.0 pF Chip Capacitors 8.2 pF Chip Capacitors 50 Ω, 3 dB Hybrid Coupler 50 Ω, 10 W Termination 4.3 KΩ, 1/4 W Chip Resistors 0.020″,

Freescale Semiconductor Technical Data Document Number: MDE6IC7120N Rev.

0, 10/2009 RF LDMOS Wideband Integrated Power Amplifiers The MDE6IC7120N/GN wideband integrated circuit is designed with on - chip matching that makes it usable from 728 to 768 MHz.

This multi - stage structure is rated for 26 to 32 Volt operation and covers all typical cellular base station modulation formats.

Typical Doherty Single - Carrier W - CDMA Performance: VDD = 28 Volts, IDQ1A = IDQ1B = 80 mA, IDQ2A =

MDE6IC7120GNR1 Features

* Production Tested in a Symmetrical Doherty Configuration

* 100% PAR Tested for Guaranteed Output Power Capability

* Characterized with Series Equivalent Large - Signal Impedance Parameters and Common Source S - Parameters

* On - Chip Matching (50 Ohm Input, DC Block