MHE1003N RF Power LDMOS Transistor

Freescale Semiconductor

Description

Freescale Semiconductor Technical Data Document Number: MHE1003N Rev.0, 7/2016 RF Power LDMOS Transistor N *Channel Enhancement *Mode.

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Datasheet Specifications

Part number: MHE1003N
Manufacturer: Freescale Semiconductor
File Size: 353.53 KB
Datasheet: MHE1003N-FreescaleSemiconductor.pdf
Description: RF Power LDMOS Transistor

Features

* Characterized with series equivalent large
* signal impedance parameters and common source S
* parameters
* Internally pre
* matched for ease of use
* Qualified for operation up to 28 Vdc
* Integrated ESD protection
* 150C case operating temperature
* 225

Applications

* operating in the 2450 MHz ISM band. Typical Performance: VDD = 26 Vdc, IDQ = 50 mA Frequency (MHz) Signal Type Gps (dB) PAE (%) Pout (W) 2400 CW 14.0 61.5 230 2450 13.9 62.0 224 2500 11.5 61.8 214 Load Mismatch/Ruggedness Frequency (MHz) Signal Type VSWR 2450 CW > 10:1 at all Phas

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MHE1003N Power LDMOS Transistor Freescale Semiconductor

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