MHE1003N Datasheet (Freescale Semiconductor)

MHE1003N, RF Power LDMOS Transistor

Freescale Semiconductor Technical Data Document Number: MHE1003N Rev.

0, 7/2016 RF Power LDMOS Transistor N Channel Enhancement Mode Lateral MOSFET This 220 W CW high efficiency RF power transistor is designed for consumer and commercial cooking applications operating in the 2450 MHz ISM band.

Typical Performance: VDD = 26 Vdc, IDQ = 50 mA Frequency (MHz) Signal Type Gps (dB) PAE (%) Pout (W) 2400 CW 14.0 61.5 230 2450 13.9 62.0 224 2500 11.5 61.8 214 Load Mismatc

MHE1003N Features

* Characterized with series equivalent large

* signal impedance parameters and common source S

* parameters

* Internally pre

* matched for ease of use

* Qualified for operation up to 28 Vdc

* Integrated ESD protection

* 150C case operating temperature

* 225