* Single Supply Enhancement Mode GaAs MESFET Technology
* Internal 50 Ω Input/Output Matching
* High Gain Three Stage Amplifier Design
* Typical 3.5 V Characteristics: Pout = 35.5 dBm, PAE = 50% for GSM850 Pout = 35.2 dBm, PAE = 53% for GSM900 Pout = 33.8 dBm, PAE =
MMM5062
Freescale Semiconductor
666.70 KB
Quad-band gsm gprs 3.5 v power amplifier.
Technical Data
Freescale Semiconductor, Inc.
ARCHIVED BY FREESCALE SEMICONDUCTOR, INC. 2005
MMM5062/D Rev. 3.2, 09/2003
Quad-Band GSM GPRS 3.5 V Pow.
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