* 100% PAR Tested for Guaranteed Output Power Capability
* Characterized with Series Equivalent Large - Signal Impedance Parameters
* Internally Matched for Ease of Use
* Qualified Up to a Maximum of 32 VDD Operation
* Integrated ESD Protection
* Optim
MRFE6S9205HR3 Datasheet (398.72 KB)
MRFE6S9205HR3
Freescale Semiconductor
398.72 KB
Rf power field effect transistors.
Freescale Semiconductor Technical Data RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for broadband commerc.
📁 Related Datasheet
MRFE6S9205HSR3 RF Power Field Effect Transistors (Freescale Semiconductor)
MRFE6S9200HR3 RF Power FET (Motorola Semiconductor Products)
MRFE6S9200HSR3 RF Power FET (Motorola Semiconductor Products)
MRFE6S9201HR3 RF Power Field Effect Transistors (Motorola Semiconductor Products)
MRFE6S9201HSR3 RF Power Field Effect Transistors (Motorola Semiconductor Products)
MRFE6S9045NR1 RF Power FET (Freescale Semiconductor)
MRFE6S9060NR1 RF Power FET (Freescale Semiconductor)
MRFE6S9125NBR1 N-Channel Enhancement-Mode Lateral MOSFETs (Freescale Semiconductor)
MRFE6S9125NR1 N-Channel Enhancement-Mode Lateral MOSFETs (Freescale Semiconductor)
MRFE6S9130HR3 RF Power FET (Freescale Semiconductor)
