Datasheet4U Logo Datasheet4U.com

MRFE6S9205HR3 - RF Power Field Effect Transistors

Key Features

  • 100% PAR Tested for Guaranteed Output Power Capability.
  • Characterized with Series Equivalent Large - Signal Impedance Parameters.
  • Internally Matched for Ease of Use.
  • Qualified Up to a Maximum of 32 VDD Operation.
  • Integrated ESD Protection.
  • Optimized for Doherty.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
MRFE6S9200HR3 RF Power FET Motorola Semiconductor Products
MRFE6S9200HSR3 RF Power FET Motorola Semiconductor Products
MRFE6S9201HR3 RF Power Field Effect Transistors Motorola Semiconductor Products
MRFE6S9201HSR3 RF Power Field Effect Transistors Motorola Semiconductor Products
MRFE6S8046GNR1 RF Power Field Effect Transistors Freescale

Other Datasheets by Freescale Semiconductor (now NXP Semiconductors)

Part Number Description
MRFE6S9205HSR3 RF Power Field Effect Transistors
MRFE6S9045NR1 RF Power FET
MRFE6S9060NR1 RF Power FET
MRFE6S9125NBR1 N-Channel Enhancement-Mode Lateral MOSFETs
MRFE6S9125NR1 N-Channel Enhancement-Mode Lateral MOSFETs

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Freescale Semiconductor Technical Data RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of these devices make them ideal for large - signal, common - source amplifier applications in 28 volt base station equipment. • Typical Single - Carrier W - CDMA Performance: VDD = 28 Volts, IDQ = 1400 mA, Pout = 58 Watts Avg., Full Frequency Band, 3GPP Test Model 1, 64 DPCH with 50% Clipping, Channel Bandwidth = 3.84 MHz, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF. Power Gain — 21.2 dB Drain Efficiency — 34% Device Output Signal PAR — 6.3 dB @ 0.01% Probability on CCDF ACPR @ 5 MHz Offset — - 39.1 dBc in 3.