2SK2761-01MR
Fuji Electric
357.78kb
N-channel mos-fet.
TAGS
📁 Related Datasheet
2SK2761 - N-channel MOS-FET
(Fuji Electric)
2SK2761-01MR
FAP-IIS Series
> Features
High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guaran.
2SK2760-01 - N-channel MOS-FET
(Fuji Electric)
2SK2760-01
FAP-IIS Series
> Features
High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarante.
2SK2762 - Power MOSFET
(Fuji Electric)
.
2SK2762-01L - Power MOSFET
(Fuji Electric)
.
2SK2762-01S - Power MOSFET
(Fuji Electric)
.
2SK2763-01 - N-channel MOS-FET
(Fuji Electric)
2SK2763-01
FAP-IIS Series
> Features
High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarante.
2SK2764-01R - N-channel MOS-FET
(Fuji Electric)
2SK2764-01R
FAP-IIS Series
> Features
High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarant.
2SK2765 - N-channel MOS-FET
(Fuji Electric)
2SK2765-01
FAP-IIS Series
> Features
High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarante.
2SK2765-01 - N-channel MOS-FET
(Fuji Electric)
2SK2765-01
FAP-IIS Series
> Features
High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarante.
2SK2765-01 - N-Channel MOSFET
(INCHANGE)
isc N-Channel MOSFET Transistor
·FEATURES ·With TO-3PN packaging ·High speed switching ·Standard level gate drive ·Easy to use ·100% avalanche tested.
Stock and price