• Part: 2SK3600-01SJ
  • Description: N-CHANNEL SILICON POWER MOSFET
  • Category: MOSFET
  • Manufacturer: Fuji Electric
  • Size: 276.42 KB
Download 2SK3600-01SJ Datasheet PDF
Fuji Electric
2SK3600-01SJ
2SK3600-01SJ is N-CHANNEL SILICON POWER MOSFET manufactured by Fuji Electric.
- Part of the 2SK3600-01L comparator family.
Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof N-CHANNEL SILICON POWER MOSFET Outline Drawings (mm) P4 Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters Maximum ratings and characteristic Absolute maximum ratings (Tc=25°C unless otherwise specified) Item Drain-source voltage Continuous drain current Pulsed drain current Gate-source voltage Non-repetitive Avalanche current Maximum Avalanche Energy Maximum Drain-Source d V/dt Peak Diode Recovery d V/dt Max. power dissipation Operating and storage temperature range Symbol V DS VDSX - 5 ID ID(puls] VGS IAS - 2 EAS - 1 d VDS/dt - 4 d V/dt - 3 PD Ta=25°C Tc=25°C Tch Tstg Ratings 100 70 ±29 ±116 ±30 29 155.8 20 5 1.67 105 +150 -55 to +150 Unit V V A A V A m J k V/µs k V/µs W °C °C - 2 Tch < =150°C - 5 VGS=-30V Equivalent circuit schematic Drain(D) Gate(G) Source(S) - 1 L=222µH, Vcc=48V, Tch=25°C, See to Avalanche Energy Graph - 3 IF< = BVDSS, Tch < = 150°C - 4 VDS < = -ID, -di/dt=50A/µs, Vcc < = 100V Symbol V(BR)DSS VGS(th) IDSS IGSS RDS(on) gfs Ciss Coss Crss td(on) tr td(off) tf QG QGS QGD IAV V SD t rr Qrr Electrical characteristics (Tc =25°C unless otherwise specified) Item Drain-source breakdown voltaget Gate threshold voltage Zero gate voltage drain current Gate-source leakage current Drain-source on-state resistance Forward transcondutance Input capacitance Output capacitance Reverse transfer capacitance Turn-on time ton Turn-off time toff Total Gate Charge Gate-Source Charge Gate-Drain Charge Avalanche capability Diode forward on-voltage Reverse recovery time Reverse recovery charge Test Conditions ID= 250µA VGS=0V ID= 250µA VDS=VGS VDS=100V VGS=0V VDS=80V VGS=0V VGS=±30V VDS=0V ID=10A VGS=10V ID=10A VDS=25V VDS =75V VGS=0V f=1MHz VCC=48V ID=10A VGS=10V RGS=10 Ω V CC =50V ID=20A VGS=10V L=222µH Tch=25°C IF=20A VGS=0V Tch=25°C IF=20A VGS=0V -di/dt=100A/µs Tch=25°C Tch=25°C Tch=125°C 10 47 12 730 190 12 12 3.8 23 8.5 22 9 6 1.10 65...