FGW40N65WE - Discrete IGBT

Fuji Electric

FGW40N65WE Datasheet Preview — Preview of FGW40N65WE PDF

Datasheet Details

Part number	FGW40N65WE
Manufacturer	Fuji ↗ Electric
File Size	625.92 KB
Description	Discrete IGBT
Datasheet	FGW40N65WE-FujiElectric.pdf

FGW40N65WE Product details

Description

Zero Gate Voltage Collector Current Symbol ICES Conditions VCE = 650V, VGE = 0V Tj=25°C Tj=175°C Gate-Emitter Leakage Current IGES VCE = 0V, VGE = ±20V Gate-Emitter Threshold Voltage VGE (th) VCE = 20V, IC = 40mA Tj=25°C Collector-Emitter Saturation Voltage VCE (sat) VGE = 15V, IC = 40A Tj=125°C Tj=175°C Input Capacitance Cies VCE=25V Output Capacitance Coes VGE=0V Reverse Transfer Capacitance Cres f=1MHz VCC = 520V Gate Charge QG IC = 40A Turn-On Delay Time Rise Ti

Features

Low power loss Low switching surge and noise High reliability, high ruggedness (RBSOA, SCSOA etc. ).

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Published: Apr 9, 2025 |