FGW50N65WE Discrete IGBT

Fuji Electric

Description

FGW50N65WE http://www.fujielectric.com/products/semiconductor/ Discrete IGBT Discrete IGBT (High-Speed W series) 650V / 50A .
Zero Gate Voltage Collector Current Symbol ICES Conditions VCE = 650V, VGE = 0V Tj=25°C Tj=175°C Gate-Emitter Leakage Current IGES VCE = 0V, VG.

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Datasheet Specifications

Part number: FGW50N65WE
Manufacturer: Fuji Electric
File Size: 650.08 KB
Datasheet: FGW50N65WE-Fuji.pdf
Description: Discrete IGBT

Applications

* Uninterruptible power supply PV Power coditionner Inverter welding machine Maximum Ratings and Characteristics Absolute Maximum Ratings at Tj=25°C (unless otherwise specified) Items Collector-Emitter Voltage Gate-Emitter Voltage Transient Gate-Emitter Voltage DC Collector Current Pulsed Collector

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FGW50N65WE Discrete IGBT Fuji Electric

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