FMI06N60ES

N-CHANNEL SILICON POWER MOSFET

Fuji Electric

FMI06N60ES Features

* Maintains both low power loss and low noise Lower RDS(on) characteristic More controllable switching dv/dt by gate resistance Smaller VGS ringing waveform during switching Narrow band of the gate threshold voltage (3.7±0.5V) High avalanche durability Applications Switching regulators UPS (Uninterrup

FMI06N60ES General Description

Drain-Source Voltage Continuous Drain Current Pulsed Drain Current Gate-Source Voltage Repetitive and Non-Repetitive Maximum Avalanche Current Non-Repetitive Maximum Avalanche Energy Repetitive Maximum Avalanche Energy Peak Diode Recovery dV/dt Peak Diode Recovery -di/dt Symbol VDS VDSX ID IDP VGS .

FMI06N60ES Datasheet (420.25 KB)

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Datasheet Details

Part number:

FMI06N60ES

Manufacturer:

Fuji Electric

File Size:

420.25 KB

Description:

N-channel silicon power mosfet.

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FMI06N60ES N-CHANNEL SILICON POWER MOSFET Fuji Electric

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FMI06N60ES Features

FMI06N60ES General Description

Datasheet Details

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Description:

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