FMI06N60ES Datasheet, Mosfet, Fuji Electric

FMI06N60ES Features

• Mosfet Maintains both low power loss and low noise Lower RDS(on) characteristic More controllable switching dv/dt by gate resistance Smaller VGS ringing waveform during switching Narrow band o

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Part number:

FMI06N60ES

Manufacturer:

Fuji Electric

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420.25kb

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📄 Datasheet

Description:

N-channel silicon power mosfet. Drain-Source Voltage Continuous Drain Current Pulsed Drain Current Gate-Source Voltage Repetitive and Non-Repetitive Maximum Avalanch

FMI06N60ES Application

• Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters Outline Drawings [mm] T-Pack(L) 13&40-%&3 %
• .&/4

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FMI06N60ES

Fuji Electric

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