FMR11N90E - N-CHANNEL SILICON POWER MOSFET

Fuji Electric

FMR11N90E Datasheet Preview — Preview of FMR11N90E PDF

Datasheet Details

Part number	FMR11N90E
Manufacturer	Fuji ↗ Electric
File Size	350.93 KB
Description	N-CHANNEL SILICON POWER MOSFET
Datasheet	FMR11N90E-FujiElectric.pdf

FMR11N90E Product details

Description

Drain-Source Voltage Continuous Drain Current Pulsed Drain Current Gate-Source Voltage Repetitive and Non-Repetitive Maximum AvalancheCurrent Non-Repetitive Maximum Avalanche Energy Repetitive Maximum Avalanche Energy Peak Diode Recovery dV/dt Peak Diode Recovery -di/dt Symbol VDS VDSX ID IDP VGS IAR EAS EAR dV/dt -di/dt Maximum Power Dissipation PD Operating

Features

Maintains both low power loss and low noise Lower RDS(on) characteristic More controllable switching dv/dt by gate resistance Smaller VGS ringing waveform during switching Narrow band of the gate threshold voltage (4.0±0.5V) High avalanche durability.

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Published: Jun 9, 2017 |