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FMV07N60S1

N-Channel enhancement mode power MOSFET

FMV07N60S1 Features

* Pb-free lead terminal RoHS compliant Applications For switching Outline Drawings [mm] TO-220F (SLS) Equivalent circuit schematic ②Drain Connection 1 Gate 2 Drain 3 Source DIMENSIONS ARE IN MILLIMETERS. Absolute Maximum Ratings at TC=25°C (unless otherwise specified) Description Drain-Source Volt

FMV07N60S1 General Description

Drain-Source Voltage Symbol VDS VDSX Continuous Drain Current ID Pulsed Drain Current Gate-Source Voltage Repetitive and Non-Repetitive Maximum Avalanche Current Non-Repetitive Maximum Avalanche Energy Maximum Drain-Source dV/dt Peak Diode Recovery dV/dt Peak Diode Recovery -di/dt IDP VGS IAR E.

FMV07N60S1 Datasheet (1.43 MB)

Preview of FMV07N60S1 PDF

Datasheet Details

Part number:

FMV07N60S1

Manufacturer:

Fuji Electric

File Size:

1.43 MB

Description:

N-channel enhancement mode power mosfet.
FMV07N60S1 Super J MOS® S1 series http://www.fujielectric.com/products/semiconductor/ FUJI POWER MOSFET N-Channel enhancement mode power MOSFET Feat.

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FMV07N60S1 N-Channel enhancement mode power MOSFET Fuji Electric

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