FMW60N070S2HF
Fuji Electric
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N-channel power mosfet.
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FMW60N070S2HF - N-Channel MOSFET Transistor
(Inchange Semiconductor)
isc N-Channel MOSFET Transistor
FMW60N070S2HF
FEATURES ·Drain Current : ID= 53.2A@ TC=25℃ ·Drain Source Voltage
: VDSS= 600V(Min) ·Static Drain-Sour.
FMW60N190S2HF - N-Channel MOSFET
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isc N-Channel MOSFET Transistor
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·FEATURES ·With low gate drive requirements ·Low switching loss ·Low on-state resistance ·Easy to driv.
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EMX4 / UMW6N / UMW10N / UMX4N / FMW6 / FMW10 / IMX4
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FMW-2106 - Schottky Barrier Rectifier
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VRM = 60 V, IF(AV) = 15 A Schottky Diode
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The FMW-2156 is a 60 V, 15 A Schottky diode with allowing improvements in V.
FMW-2206 - Schottky Barrier Rectifier
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FMW-24H - Silicon Schottky Barrier Diode
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SANKEN ELECTRIC CO., LTD.
1. Scope The present specifications shall apply to an FMW-24H.
2. Outline High Frequency Rectification
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FMW-4304 - Schottky Diode
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VRSM = 40 V, IF(AV) = 30 A Schottky Diode
FMW-4304
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Description
The FMW-4304 is a 40 V, 30 A Schottky diode with allowing improvements in .
FMW-4306 - Schottky Diode
(Sanken)
VRSM = 60 V, IF(AV) = 30 A Schottky Diode
FMW-4306
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The FMW-4306 is a 60 V, 30 A Schottky diode with allowing improvements in .
FMW10 - dual transistors
(Rohm)
Transistors
EMX4 / UMW6N / UMW10N / UMX4N / FMW6 / FMW10 / IMX4
High transition frequency (dual transistors)
EMX4 / UMW6N / UMW10N / UMX4N / FMW6 / .