2SK2642-01MR
Features t e High speed switching e h Low on-resistance S No secondary breakdown apower t Low driving a High D voltage . V =±35V Guarantee w Avalanche-proof w w
2SK2642-01MR m
FUJI POWER MOS-FET
N-CHANNEL SILICON POWER MOS-FET
TO-220F15
Applications
Switching regulators UPS DC-DC converters General purpose power amplifier
Maximum ratings and characteristic Absolute maximum ratings
(Tc=25°C unless otherwise specified)
Item Drain-source voltage Continuous drain current Pulsed drain current Gate-source voltage Maximum Avalanche Energy Max. power dissipation Operating and storage temperature range Symbol V DS ID ID(puls] VGS EAV
- 1 PD Tch Tstg Rating 500 ±15 ±60 ±35 88.7 50 +150 -55 to +150 Unit V A A V m J W °C °C
Electrical characteristics (Tc =25°C unless otherwise specified)
Item Drain-source breakdown voltaget Gate threshold voltage Zero gate voltage drain current Symbol V(BR)DSS VGS(th) IDSS
Gate-source leakage current Drain-source on-state resistance Forward...
