P4CN012W
Fujitsu Media Devices
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Compact power twin relay.
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P4CN010W - COMPACT POWER TWIN RELAY
(Fujitsu Media Devices)
FTR-K1 SERIES
COMPACT POWER TWIN RELAY
1 POLE x 2 - 25A, H-Bridge (for automotive applications)
FTR-P4 Series
n FEATURES
l Compact for high density .
P4CN009W - COMPACT POWER TWIN RELAY
(Fujitsu Media Devices)
FTR-K1 SERIES
COMPACT POWER TWIN RELAY
1 POLE x 2 - 25A, H-Bridge (for automotive applications)
FTR-P4 Series
n FEATURES
l Compact for high density .
P4C1023 - LOW POWER 128K x 8 SINGLE CHIP ENABLE CMOS STATIC RAM
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P4C1023/P4C1023L LOW POWER 128K x 8 SINGLE CHIP ENABLE CMOS STATIC RAM
FEATURES
VCC Current — Operating: 35mA — CMOS Standby: 100µA Access Times —55/7.
P4C1023L - LOW POWER 128K x 8 SINGLE CHIP ENABLE CMOS STATIC RAM
(Pyramid Semiconductor)
P4C1023/P4C1023L LOW POWER 128K x 8 SINGLE CHIP ENABLE CMOS STATIC RAM
FEATURES
VCC Current — Operating: 35mA — CMOS Standby: 100µA Access Times —55/7.
P4C1024 - HIGH SPEED 128K x 8 DUAL CHIP ENABLE CMOS STATIC RAM
(PYRAMID)
P4C1024 HIGH SPEED 128K x 8 DUAL CHIP ENABLE CMOS STATIC RAM
FEATURES
High Speed (Equal Access and Cycle Times) — 15/20/25/35 ns (Commercial/Industria.
P4C1024 - HIGH SPEED 128K X 8 CMOS STATIC RAM
(ETC)
P4C1024
P4C1024 HIGH SPEED 128K x 8 CMOS STATIC RAM
FEATURES
High Speed (Equal Access and Cycle Times) — 15/17/20/25/35 ns (Commercial) — 20/25/35/45.
P4C1024L - LOW POWER 128K x 8 CMOS STATIC RAM
(Pyramid Semiconductor)
P4C1024L LOW POWER 128K x 8 CMOS STATIC RAM
FEATURES
VCC Current (Commercial/Industrial) — Operating: 70mA/85mA — CMOS Standby: 100µA/100µA Access Tim.
P4C1026 - ULTRA HIGH SPEED 256K x 4 STATIC CMOS RAM
(Pyramid Semiconductor)
P4C1026 ULTRA HIGH SPEED 256K x 4 STATIC CMOS RAM
FEATURES
Full CMOS, 6T Cell High Speed (Equal Access and Cycle Times) – 15/20/25/35 ns (Commercial/I.
P4C1041 - HIGH SPEED 256K x 16 (4 MEG) STATIC CMOS RAM
(PYRAMID)
P4C1041 HIGH SPEED 256K x 16 (4 MEG) STATIC CMOS RAM
FEATURES
High Speed (Equal Access and Cycle Times) — 10/12/15/20 ns (Commercial) — 12/15/20 ns (.
P4C1041L - STATIC CMOS RAM
(PYRAMID)
FEATURES
Fast Access Time - 55 ns Low Power Operation Single 5V±10% Power Supply 2.0V Data Retention Easy Memory Expansion Using CE and OE I.