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MBM29DL161TD-90

FLASH MEMORY CMOS 16M (2M x 8/1M x 16) BIT

MBM29DL161TD-90 Features

* 0.33 µm Process Technology

* Simultaneous Read/Write operations (dual bank) Multiple devices available with different bank sizes (Refer to “MBM29DL16XTD/BD Device Bank Divisions Table” in sGENERAL DESCRIPTION) Host system can program or erase in one bank, then immediately and s

MBM29DL161TD-90 General Description

Host system can program or erase in one bank, then immediately and simultaneously read from the other bank Zero latency between read and write operations Read-while-erase Read-while-program

* Single 3.0 V read, program, and erase Minimizes system level power requirements s PRODUCT LI.

MBM29DL161TD-90 Datasheet (1.10 MB)

Preview of MBM29DL161TD-90 PDF

Datasheet Details

Part number:

MBM29DL161TD-90

Manufacturer:

Fujitsu

File Size:

1.10 MB

Description:

Flash memory cmos 16m (2m x 8/1m x 16) bit.
www.DataSheet4U.com FUJITSU SEMICONDUCTOR DATA SHEET DS05-20874-7E FLASH MEMORY CMOS 16M (2M × 8/1M × 16) BIT Dual Operation MBM29DL16XTD/BD -70/90.

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TAGS

MBM29DL161TD-90 FLASH MEMORY CMOS 16M BIT Fujitsu

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