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MBM29LV651UE-12 - 64M (4M x 16) BIT FLASH MEMORY

Download the MBM29LV651UE-12 datasheet PDF (MBM29LV650UE included). The manufacturer datasheet provides complete specifications, pinout details, electrical characteristics, and typical applications for 64m (4m x 16) bit flash memory.

Description

The MBM29LV650UE/651UE is a 64M-bit, 3.0 V-only Flash memory organized as 4M words of 16 bits each.

device is designed to be programmed in system with the standard system 3.0 V VCC supply.

5.0 V VCC are not required for write or erase operations.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (MBM29LV650UE_FujitsuMediaDevices.pdf) that lists specifications for multiple related part numbers.

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Full PDF Text Transcription

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FUJITSU SEMICONDUCTOR DATA SHEET FLASH MEMORY CMOS 64M (4M × 16) BIT MBM29LV650UE/651UE -90/12 DS05-20882-2E s DESCRIPTION The MBM29LV650UE/651UE is a 64M-bit, 3.0 V-only Flash memory organized as 4M words of 16 bits each. The device is designed to be programmed in system with the standard system 3.0 V VCC supply. 12.0 V VPP and 5.0 V VCC are not required for write or erase operations. The devices can also be reprogrammed in standard EPROM programmers. To eliminate bus contention the devices have separate chip enable (CE), write enable (WE), and output enable (OE) controls. The MBM29LV650UE/651UE is entirely command set compatible with JEDEC single-power-supply Flash stan- dard. Commands are written to the command register using standard microprocessor write timings.
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