D84EN2 Datasheet - GE

D84EN2 FIELD EFFECT POWER TRANSISTOR

~o~[p~ FIELD EFFECT POWER TRANSISTOR IRF640,641 D84EN2,M2 18 AMPERES 200, 150 VOLTS ROS(ON) =0.18 n This series of N-Channel Enhancement-mode Power MOSFETs utilizes GE's advanced Power OMOS technology to achieve low on-resistance with excellent device ruggedness and reliability. This design has been optimized to give superior performance in most switching applications including: switching power supplies, inverters, converters and solenoid/relay drivers. Also, the extended safe operating area w.

D84EN2 Features

* Polysilicon gate - Improved stability and reliability

* No secondary breakdown - Excellent ruggedness

* Ultra-fast switching - Independent of temperature

* Voltage controlled - High transconductance

* Low input capacitance - Reduced drive requirement

D84EN2 Datasheet (198.95 KB)

D84EN2 Datasheet Preview — Preview of D84EN2 PDF

Datasheet Details

Part number:

D84EN2

Manufacturer:

File Size:

198.95 KB

Description:

Field effect power transistor.

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