P11C68 Datasheet - GEC Plessey Semiconductors

P11C68 CMOS / SNOS NVSRAM

www.DataSheet4U.com P10C68/P11C68 PRELIMINARY INFORMATION DS3600-1.2 September 1992 P10C68/P11C68 (Previously PNC10C68 and PNC11C68) CMOS/SNOS NVSRAM HIGH PERFORMANCE 8 K x 8 NON-VOLATILE STATIC RAM (Supersedes DS3159-1.3, DS3160-1.3, DS3234-1.1, DS3235-1.1) The P10C68 and P11C68 are fast static RAMs (35 and 45 ns) with a non-volatile electically-erasable PROM (EEPROM) cell incorporating in each static memory cell. The SRAM can be read and written an unlimited number of times while independe.

P11C68 Features

* I Non-Volatile Data Integrity I 10 year Data Retention in EEPROM I 35ns and 45ns Address and Chip Enable Access Times I 20ns and 25ns Output Enable Access I Unlimited Read and Write to SRAM I Unlimited Recall Cycles from EEPROM I 104 Store Cycles to EEPROM I Automatic Recall on Power up I Automatic

P11C68_GECPlesseySemiconductors.pdf