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GE4953 - P-CHANNEL MOS FIELD EFFECT TRANSISTOR

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Datasheet Details

Part number	GE4953
Manufacturer	GEMOS
File Size	268.11 KB
Description	P-CHANNEL MOS FIELD EFFECT TRANSISTOR
Datasheet	GE4953-GEMOS.pdf

GE4953 Product details

Description

The GE4953 uses advanced trench technology to provide excellent RDS(ON), low gate charge. 25V).

Features

VDS = -30V,ID = -4.9A RDS(ON) < 85mΩ @ VGS=-4.5V RDS(ON) < 53mΩ @ VGS=-10V.
High Power and current handing capability.
Lead free product is acquired.
Surface Mount Package.

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Published: Aug 13, 2015 |