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GE4953 P-CHANNEL MOS FIELD EFFECT TRANSISTOR

GE4953 Description

GEMOS MOS FIELD EFFECT TRANSISTOR GE4953 P-CHANNEL MOS FIELD EFFECT TRANSISTOR .
The GE4953 uses advanced trench technology to provide excellent RDS(ON), low gate charge.

GE4953 Features

* VDS = -30V,ID = -4.9A RDS(ON) < 85mΩ @ VGS=-4.5V RDS(ON) < 53mΩ @ VGS=-10V
* High Power and current handing capability
* Lead free product is acquired

GE4953 Applications

* requiring a wide range of gave drive voltage ratings (4.5V

📥 Download Datasheet

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Datasheet Details

Part number
GE4953
Manufacturer
GEMOS
File Size
268.11 KB
Datasheet
GE4953-GEMOS.pdf
Description
P-CHANNEL MOS FIELD EFFECT TRANSISTOR

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P-CHANNEL MOS FIELD EFFECT TRANSISTOR GEMOS
GEMOS GE4953-like datasheet