GE4953 P-CHANNEL MOS FIELD EFFECT TRANSISTOR

Description

GEMOS MOS FIELD EFFECT TRANSISTOR GE4953 P-CHANNEL MOS FIELD EFFECT TRANSISTOR .
The GE4953 uses advanced trench technology to provide excellent RDS(ON), low gate charge.

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Datasheet Specifications

Part number: GE4953
Manufacturer: GEMOS
File Size: 268.11 KB
Datasheet: GE4953-GEMOS.pdf
Description: P-CHANNEL MOS FIELD EFFECT TRANSISTOR

Features

* VDS = -30V,ID = -4.9A RDS(ON) < 85mΩ @ VGS=-4.5V RDS(ON) < 53mΩ @ VGS=-10V
* High Power and current handing capability
* Lead free product is acquired

Applications

* requiring a wide range of gave drive voltage ratings (4.5V

GE4953 Distributors

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GE4953 P-CHANNEL MOS FIELD EFFECT TRANSISTOR GEMOS

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