GE4953 Datasheet, Transistor, GEMOS

✔ GE4953 Features

VDS = -30V,ID = -4.9A RDS(ON) < 85mΩ @ VGS=-4.5V RDS(ON) < 53mΩ @ VGS=-10V
High Power and current handing capability
Lead free product is acquired
Surface Mount P

✔ GE4953 Application

requiring a wide range of gave drive voltage ratings (4.5V
25V). GENERAL FEATURES
VDS = -30V,ID = -4.9A

PDF File Details

Part number:

GE4953

Manufacturer:

GEMOS

File Size:

268.11 KB

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📄 Datasheet

Description:

P-channel mos field effect transistor. The GE4953 uses advanced trench technology to provide excellent RDS(ON), low gate charge. It has been optimized for power management

📥 Download PDF (268.11 KB)

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GE4953 P-CHANNEL MOS FIELD EFFECT TRANSISTOR GEMOS