This Power MOSFET is produced using Truesemi’s advanced planar stripe, DMOS technology.This latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics, such as fast switching time,low on resistance.low gate charge and especially excel
5N60F Features
* 4.5A, 600V, RDS(on) = 2.5Ω @VGS = 10 V
* Low gate charge ( typical 17nC)
* Fast switching
* 100% avalanche tested
* Improved dv/dt capability Ordering Information PART NUMBER PACKAGE BRAND 5N60/5N60F TO-220/220F 0GFD www.goford.cn TEL：0755-86350980 FAX：075
Datasheet Details
5N60F, 5N60
GFD
1.37 MB
600v n-channel mosfet.
This datasheet PDF includes multiple part numbers: 5N60F, 5N60.
Please refer to the document for exact specifications by model.
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