0809LD120 120 Watt / 28V / 1 Ghz LDMOS FET

Description

R.0.2P.991602-BEHRE 0809LD120 120 WATT, 28V, 1 GHz LDMOS FET PRELIMINARY ISSUE GENERAL .
The 0809LD120 is a common source N-Channel enhancement mode lateral MOSFET capable of providing 120 Watts of RF power from HF to 1 GHz.

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Datasheet Specifications

Part number: 0809LD120
Manufacturer: GHZ Technology
File Size: 17.11 KB
Datasheet: 0809LD120_GHZTechnology.pdf
Description: 120 Watt / 28V / 1 Ghz LDMOS FET

Applications

* THAT THE PERFORMANCE CHARACTERISTICS BE VERIFIED BY CONTACTING THE FACTORY. GHz Technology Inc. 3000 Oakmead Village Drive, Santa Clara, CA 95051-0808 Tel. 408 / 986-8031 Fax 408 / 986-8120

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0809LD120 120 Watt 28V Ghz LDMOS FET GHZ Technology

GHZ Technology 0809LD120-like datasheet