Part number:
BL4N65
Manufacturer:
GME
File Size:
435.25 KB
Description:
N-channel power mosfet.
* RDS(ON) =2.5Ω@ VGS = 10V
* Ultra low gate charge ( typical 15 nC ) Pb Lead-free
* Low reverse transfer Capacitance ( CRSS = typical 8.0 pF )
* Fast switching capability
* Avalanche energy specified
* Improved dv/dt capability, high ruggedness Production specification
BL4N65
GME
435.25 KB
N-channel power mosfet.
📁 Related Datasheet
BL4N60 - N-Channel Power Mosfet
(GME)
4A,600V N-Channel Power Mosfet
FEATURES
RDS(ON) =2.5Ω@ VGS = 10V Ultra low gate charge ( typical 15 nC )
Pb
Lead-free
Low reverse transfer C.
BL4N60D - N-Channel Power Mosfet
(GME)
.
BL4N60F - N-Channel Power MOSFET
(GME)
4A,600V N-Channel Power Mosfet
FEATURES
RDS(ON) =2.5Ω@ VGS = 10V Ultra low gate charge ( typical 15 nC )
Pb
Lead-free
Low reverse transfer C.
BL4N60I - N-Channel Power Mosfet
(GME)
.
BL4N65F - N-Channel Power MOSFET
(GME)
4A,650V N-Channel Power Mosfet
FEATURES
RDS(ON) =2.5Ω@ VGS = 10V Ultra low gate charge ( typical 15 nC )
Pb
Lead-free
Low reverse transfer C.
BL4N150 - Power MOSFET
(BELLING)
BL4N150
Power MOSFET
1.Description
BL4N150, the silicon N-channel Enhanced
MOSFETs, is obtained by advanced MOSFET
technology which reduce the con.
BL4N50F - N-Channel Power MOSFET
(GME)
4A,500V N-Channel Power Mosfet
FEATURES
RDS(ON) =2.0Ω@ VGS = 10V High Switching Speed 100% Avalanche Tested
Pb
Lead-free
Production specifica.
BL4N90 - Power MOSFET
(BELLING)
BL4N90
Power MOSFET
1.Description
BL4N90, the silicon N-channel Enhanced
MOSFETs, is obtained by advanced MOSFET
technology which reduce the condu.