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BL8N60F N-Channel Power Mosfet

BL8N60F Description

Production specification N-Channel Enhancement Mode Field Effect Transistor .

BL8N60F Features

* RDS(ON) =1.2Ω@VGS = 10V. Pb
* Ultra Low gate charge (typical 28nC) Lead-free
* Low reverse transfer capacitance (CRSS = typical 12.0 pF)
* Fast switching capability
* Avalanche energy specified
* Improved dv/dt capability, high ruggedness BL8N60F ITO-220AB MAXIMUM

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Datasheet Details

Part number
BL8N60F
Manufacturer
GME
File Size
212.53 KB
Datasheet
BL8N60F-GME.pdf
Description
N-Channel Power Mosfet

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N-Channel Power Mosfet GME
GME BL8N60F-like datasheet