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BL9N20 N-Channel Power Mosfet

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Description

Production specification N-Channel Enhancement Mode Field Effect Transistor BL9N20 .

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Datasheet Specifications

Part number
BL9N20
Manufacturer
GME
File Size
275.27 KB
Datasheet
BL9N20-GME.pdf
Description
N-Channel Power Mosfet

Features

* TrenchFET Power MOSFETS.
* 175℃ Junction Temperature.
* New Low Thermal Resistance Package. Pb Lead-free TO-220AB MAXIMUM RATING operating temperature range applies unless otherwise specified Symbol Parameter Value VDS Drain-Source Voltage 200 VGS Gate -Source Voltage ±20 ID

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