• Part: TBL250P06-3DL8
  • Description: P-Channel Enhancement Mode MOSFET
  • Category: MOSFET
  • Manufacturer: Galaxy Microelectronics
  • Size: 404.53 KB
Download TBL250P06-3DL8 Datasheet PDF
Galaxy Microelectronics
TBL250P06-3DL8
Features - Super low gate charge - 100% EAS guaranteed - Excellent Cd V/dt effect decline - Advanced high cell density Trench technology - Halogen free - Qualified to AEC-Q101 standards for high reliability Mechanical Data - Case: PDFN3×3-8L - Molding pound: UL Flammability Classification Rating 94V-0 - Terminals: Matte tin-plated leads; solderability-per MIL-STD-202, Method 208 PDFN3×3-8L Ordering Information Part Number TBL250P06-3DL8 Package PDFN3×3-8L Shipping Quantity 5000 pcs / Tape & Reel Marking Code 250P06 Maximum Ratings (@ TA = 25°C unless otherwise specified) Parameter Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current (TA = 25°C) - 1 Continuous Drain Current (TA = 70°C) - 1 Pulsed Drain Current - 2 Avalanche Energy, Single Pulsed - 3 Symbol VDSS VGSS IDM EAS Value -60 ±20 -7.7 -6.2 -55 62.9 Unit V V A A A m J Thermal Characteristics Parameter Power Dissipation (TA = 25°C) - 4 Thermal Resistance Junction-to-Air - 4 Operating Junction...