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100P03 MOSFET

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Description

GOFORD 100P03 .
DDDD S S SG DFN5x6-8 ( 5,6,7,8 ) D D DD (4) G SSS (1, 2, 3) P-Channel MOSFET Absolute Maximum Ratings (TA = 25°C Unless Otherwise Noted) Symbol Par.

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Datasheet Specifications

Part number
100P03
Manufacturer
GOFORD
File Size
3.09 MB
Datasheet
100P03-GOFORD.pdf
Description
MOSFET

Features

* VDSS RDS(ON) RDS(ON) ID @ -4.5V(Typ) @ -10V(Typ) -30V 3.1mΩ 2.2mΩ -100A
* Super High Dense Cell Design
* Reliable and Rugged
* Lead Free and Green Devices Available (RoHS Compliant)
* HBM ESD Capability level of 6.6KV typical Note : The diode connected between the gate a

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