G01N20LE - N-Channel MOSFET

Datasheet Details

This Product uses advanced trench technology MOSFETs to provide excellent RDS(ON) and low gate charge.

VDS.
ID (at VGS = 10V).
RDS(ON) (at VGS = 10V).
RDS(ON) (at VGS = 4.5V).
100% Avalanche Tested.
RoHS Compliant.
ESD (HBM)>5.0KV 200V 1.7A < 0.85Ω < 0.9Ω Schematic diagram G01N20 Marking and pin assignment.

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Published: Nov 3, 2024 |