G05P06L - P-Channel Enhancement Mode Power MOSFET

Datasheet Details

The G05P06L uses advanced trench technology to provide excellent RDS(ON) , low gate charge.It can be used in a wide variety of applications.General

l VDS l ID (at VGS = -10V) l RDS(ON) (at VGS = -10V) l RDS(ON) (at VGS = -4.5V) l 100% Avalanche Tested l RoHS Compliant -60V -5A < 80mΩ < 90mΩ Schematic diagram Application l Power switch l DC/DC converters SOT-23-3L Ordering Information Device G05P06L Package SOT-23-3L Marking G05P06 Absolute Maximum Ratings TC = 25ºC, unless otherwise noted Parameter Symbol Drain-Source Voltage Continuous Drain Current Pulsed Drain Current Gate-Source Voltage Power Dissipation Operating Junction an.

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Published: Nov 6, 2024 |