G23N06K
GOFORD
572.76kb
N-channel enhancement mode power mosfet. The G23N06K uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of appl
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G23N06 - N-Channel Enhancement Mode Power MOSFET
(GOFORD)
GOFORD
G23N06K
N-Channel Enhancement Mode Power MOSFET
Description
The G23N06K uses advanced trench technology to provide
excellent RDS(ON) , low .
G23N60UFD - SGF23N60UFD
(Fairchild Semiconductor)
SGF23N60UFD
SGF23N60UFD
Ultra-Fast IGBT
June 2001
IGBT
General Description
Fairchild's Insulated Gate Bipolar Transistor(IGBT) UFD series provides .
G2300 - CMOS Positive Voltage Regulator
(GTM)
..
Pb Free Plating Product
ISSUED DATE :2006/07/26 REVISED DATE :2006/11/09B
G2300
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
BVDSS R.
G2301 - P-CHANNEL ENHANCEMENT MODE POWER MOSFET
(GTM)
..
Pb Free Plating Product
CORPORATION
G2301
P-CHANNEL ENHANCEMENT MODE POWER MOSFET
ISSUED DATE :2004/10/12 REVISED DATE :2005/03.
G2302 - N-CHANNEL ENHANCEMENT MODE POWER MOSFET
(GTM)
..
Pb Free Plating Product
ISSUED DATE :2004/07/06 REVISED DATE :2005/03/14B
G2302
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
BVDSS R.
G2303 - P-CHANNEL ENHANCEMENT MODE POWER MOSFET
(GTM)
..
Pb Free Plating Product
CORPORATION
G2303
P-CHANNEL ENHANCEMENT MODE POWER MOSFET
ISSUED DATE :2004/10/12 REVISED DATE :2005/03.
G2304 - N-CHANNEL ENHANCEMENT MODE POWER MOSFET
(GTM)
..
Pb Free Plating Product
CORPORATION
G2304
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
ISSUED DATE :2004/10/12 REVISED DATE :2005/03.
G2304A - N-CHANNEL ENHANCEMENT MODE POWER MOSFET
(GTM)
Pb Free Plating Product
ISSUED DATE :2005/03/21 REVISED DATE :
G2304A
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
BVDSS RDS(ON) ID
30V 117m
2.5A
Descr.
G2305 - P-CHANNEL ENHANCEMENT MODE POWER MOSFET
(GTM)
..
Pb Free Plating Product
CORPORATION
G2305
P-CHANNEL ENHANCEMENT MODE POWER MOSFET
ISSUED DATE :2004/10/12 REVISED DATE :2005/03.
G2305A - P-CHANNEL ENHANCEMENT MODE POWER MOSFET
(GTM)
Pb Free Plating Product
ISSUED DATE :2005/03/21 REVISED DATE :
G2305A
P-CHANNEL ENHANCEMENT MODE POWER MOSFET
BVDSS RDS(ON) ID
-30V 80m -3.2A
Desc.