G7K2N20HE - N-Channel Enhancement Mode Power MOSFET

Product Overview

Part number	G7K2N20HE
Manufacturer	GOFORD
File Size	900.04 KB
Description	N-Channel Enhancement Mode Power MOSFET
Datasheet	G7K2N20HE Datasheet
Additional preview pages of the G7K2N20HE datasheet.

The G7K2N20HE uses advanced trench technology to provide excellent RDS(ON) , low gate charge.It can be used in a wide variety of applications.General

l VDS l ID (at VGS = 10V) l RDS(ON) (at VGS = 10V) l RDS(ON) (at VGS = 4.5V) 200V 2A < 0.70Ω < 0.72Ω l 100% Avalanche Tested l RoHS Compliant l ESD (HBM)>4KV Schematic diagram.

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Published: Nov 6, 2024 |