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GDSSF3611E, GDSSF3611E-GOOD MOSFET

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Description

Main Product Characteristics: VDSS -30 V RDS(on) 10.6 mΩ(typ.) ID -12A .
It utilizes the latest trench processing techniques to achieve the high cell density and reduces the on-resistance with high repetitive avalanche rat.

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This datasheet PDF includes multiple part numbers: GDSSF3611E, GDSSF3611E-GOOD. Please refer to the document for exact specifications by model.
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Datasheet Specifications

Part number
GDSSF3611E, GDSSF3611E-GOOD
Manufacturer
GOOD-ARK
File Size
346.51 KB
Datasheet
GDSSF3611E-GOOD-ARK.pdf
Description
MOSFET
Note
This datasheet PDF includes multiple part numbers: GDSSF3611E, GDSSF3611E-GOOD.
Please refer to the document for exact specifications by model.

Features

* Advanced trench MOSFET process technology

Applications

* Ultra low on-resistance with low gate charge
* Fast switching and reverse body recovery

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