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GSGP06140, GSGP06140-GOOD 60V N-Channel MOSFET

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Description

Main Product Characteristics BVDSS 60V RDS(ON) ID 2.0mΩ 140A D D D D G S S S .
The GSGP06140 utilizes the latest techniques to achieve high cell density and low on-resistance.

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This datasheet PDF includes multiple part numbers: GSGP06140, GSGP06140-GOOD. Please refer to the document for exact specifications by model.
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Datasheet Specifications

Part number
GSGP06140, GSGP06140-GOOD
Manufacturer
GOOD-ARK
File Size
673.58 KB
Datasheet
GSGP06140-GOOD-ARK.pdf
Description
60V N-Channel MOSFET
Note
This datasheet PDF includes multiple part numbers: GSGP06140, GSGP06140-GOOD.
Please refer to the document for exact specifications by model.

Features

* PPAK 5x6
* Advanced MOSFET process technology
* Ideal for high efficiency switched mode power supplies
* Low on-resistance with low gate charge

Applications

* Absolute Maximum Ratings (TC=25°C unless otherwise specified) Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous (TC=25°C) Drain Current-Continuous (TC=100°C) Drain Current-Pulsed1 Single Pulse Avalanche Energy2 Single Pulse Avalanche Current2 Power Dissipation (TC=25°C)

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