Description
Main Product Characteristics BVDSS 60V RDS(ON) ID 2.0mΩ 140A D D D D G S S S .
The GSGP06140 utilizes the latest techniques to achieve high cell density and low on-resistance.
Features
* PPAK 5x6
* Advanced MOSFET process technology
* Ideal for high efficiency switched mode power supplies
* Low on-resistance with low gate charge
Applications
* Absolute Maximum Ratings (TC=25°C unless otherwise specified)
Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous (TC=25°C) Drain Current-Continuous (TC=100°C) Drain Current-Pulsed1 Single Pulse Avalanche Energy2 Single Pulse Avalanche Current2 Power Dissipation (TC=25°C)