GSJD6505, GSJD6505-GOOD 650V N-Channel MOSFET

GOOD-ARK

GSJD6505 Description

Main Product Characteristics GSJD6505 650V N-Channel MOSFET D D VDS 650V RDS(ON) 750mΩ G ID 5A S G S .
The GSJD6505 utilizes the latest techniques to achieve high cell density and low on-resistance.

GSJD6505 Features

* Advanced MOSFET process technology
* Ideal for high efficiency switched mode power supplies
* Low on-resistance with low gate charge

GSJD6505 Applications

* Absolute Maximum Ratings (TC=25°C unless otherwise specified) Parameter Symbol Max. Drain-Source Voltage VDS 650 Gate-Source Voltage, AC (f>1 Hz) VGS ±30 Drain Current-Continuous (TC=25°C) 5 ID Drain Current-Continuous (TC=100°C) 3 Drain Current-Pulsed1 IDM Power Dissipation (TC=2

📥 Download Datasheet

GSJD6505 Datasheet Preview — This datasheet PDF includes multiple part numbers: GSJD6505, GSJD6505-GOOD. Please refer to the document for exact specifications by model.

Datasheet Details

Part number: GSJD6505, GSJD6505-GOOD
Manufacturer: GOOD-ARK
File Size: 521.30 KB
Datasheet: GSJD6505-GOOD-ARK.pdf
Description: 650V N-Channel MOSFET
Note: This datasheet PDF includes multiple part numbers: GSJD6505, GSJD6505-GOOD.
Please refer to the document for exact specifications by model.

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